ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK2499-Z-AZ is a switching N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a single channel configuration with three leads and a typical input capacitance (Ciss) of 3400 pF. The component is lead-free and complies with RoHS3 standards. It is packaged in bags for handling.
Feature Summary
- Designed as an N-channel MOS field effect transistor for high-power switching applications
- Lead-free construction compliant with environmental regulations
Applications
- Industrial equipment
- Consumer electronics
Procurement Notes
Verify the complete part number including the -AZ suffix to ensure correct packaging and compliance status. Confirm RoHS3 compliance requirements match project specifications. Check moisture sensitivity level details before storage and assembly planning. Ensure industrial or consumer use classification aligns with end-product design goals.
Selection Notes
Select this component for general-purpose high-power switching tasks requiring an N-channel MOSFET. Consider the 3400 pF input capacitance for drive circuit design. Verify that the single-channel architecture meets system topology needs. Ensure thermal management strategies accommodate the intended power dissipation levels in the target application environment.
Part Context
This device belongs to the Renesas 2SK2499 series of power transistors. It is categorized under single FETs and power MOSFETs. The -AZ suffix typically denotes specific packaging or tape-and-reel variations within the product line, though functional characteristics remain consistent with the base 2SK2499 model.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference guides for compatible alternatives.
