2SK2507(F)

Description：MOSFET N-CH 50V 25A TO220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:4986334d65c9 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 25A TO220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：46mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220NIS
Package / Case：TO-220-3 Full Pack

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2SK2507(F)

Overview

The Toshiba 2SK2507 is a silicon N-channel MOS field-effect transistor utilizing L2-π-MOSV technology. It features a low drain-source ON resistance of 0.034 Ω (typical) at VGS = 10 V and ID = 12 A, alongside a high forward transfer admittance of 16 S (typical). The device supports 4-V gate drive with an enhancement mode threshold voltage ranging from 0.8 to 2.0 V. Absolute maximum ratings include a 50 V drain-source voltage, 25 A DC drain current, and 30 W power dissipation at 25°C case temperature.

Feature Summary

L2-π-MOSV technology enables low on-resistance and high forward transfer admittance for efficient switching performance.
Designed for 4-V gate drive applications with a low threshold voltage range suitable for logic-level control.
Features low leakage current characteristics to minimize standby power consumption.

Applications

Chopper regulators
DC-DC converters
Motor drive circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm environmental compliance status, such as RoHS compatibility or lead-free designation. Confirm package markings and lot number formatting requirements before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring low conduction losses and fast switching speeds in moderate-voltage environments. Ensure thermal management strategies account for the specified channel-to-case thermal resistance. Validate that the application operates within the absolute maximum ratings for avalanche energy and repetitive pulse currents.

Part Context

This part belongs to Toshiba's N-channel MOSFET portfolio designed for general-purpose switching applications. It utilizes advanced π-MOSV architecture to optimize the trade-off between on-resistance and gate charge, making it suitable for compact power supply and motor control implementations.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Cross-referencing requires matching key parameters such as RDS(ON), V(BR)DSS, and package dimensions to ensure functional compatibility without design modification.