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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The Renesas 2SK2512-AZ is a high-voltage N-channel MOSFET designed for power switching applications. It features a low on-resistance and robust avalanche capability, making it suitable for use in industrial inverters and motor drives. The device operates with a drain-source voltage of 600V and a continuous drain current of 12A at 25°C. Key electrical parameters include a gate threshold voltage ranging from 2V to 4V and a maximum gate-source voltage of ±20V. The component is housed in a TO-220FN package, providing efficient thermal management for high-power density designs.
Feature Summary
- High breakdown voltage capability for demanding power environments
- Low on-state resistance for improved efficiency
- Robust avalanche energy rating for enhanced reliability
Applications
- Industrial motor drive systems
- Inverter circuits for AC motors
- Switching power supplies requiring high voltage isolation
Procurement Notes
Verify the specific suffix 'AZ' against official Renesas documentation to confirm tape-and-reel packaging or specific quality certifications. Ensure the ordering part number matches the exact pinout and thermal characteristics required by your design. Cross-reference the datasheet revision date to guarantee compatibility with current manufacturing standards and lead times.
Selection Notes
Select this component when designing circuits that require high voltage handling with moderate current capacity. Consider the thermal resistance of the TO-220FN package and ensure adequate heatsinking is implemented. Evaluate the gate charge specifications against your driver capabilities to optimize switching speeds and minimize losses during operation.
Part Context
This MOSFET belongs to Renesas' high-voltage discrete semiconductor lineup, targeting industrial automation and power conversion markets. It complements other devices in the series offering similar voltage ratings but varying current capacities. The product line emphasizes reliability and performance consistency for long-life industrial equipment applications.
Replacement Considerations
Consult official substitution guides for equivalent parts with matching voltage, current, and package dimensions. Verify pin compatibility and thermal performance before integrating alternative components into existing designs.
