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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK2529-90-E is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. This component utilizes silicon technology to provide efficient switching capabilities for power management applications. It is designed as a single FET device, offering robust performance in electronic circuits requiring reliable high-power handling. The part is supplied in bulk packaging and serves as a fundamental semiconductor element for various industrial and consumer electronics systems.
Feature Summary
- N-channel silicon MOSFET construction
- Single FET configuration
- Designed for power switching applications
Applications
- Power supply units
- Motor control circuits
- Industrial automation equipment
Procurement Notes
Verify the specific suffix -90-E against official Renesas documentation to confirm exact binning or tape-and-reel specifications. Ensure compatibility with intended thermal management requirements. Confirm that the N-channel polarity matches system design constraints before integration into final assemblies.
Selection Notes
Select this component based on its N-channel architecture and single FET topology. Evaluate suitability for specific voltage and current ratings required by the target application circuit. Consider thermal dissipation needs and package compatibility during the design phase to ensure optimal system performance.
Part Context
This part belongs to the Renesas power MOSFET family, specifically categorized under single FETs. It represents a standard discrete semiconductor solution used in broader power electronics designs. The product line focuses on providing reliable switching elements for diverse electronic manufacturing sectors.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Cross-reference pinouts and electrical characteristics carefully when considering alternative components from other manufacturers to ensure functional compatibility.
