ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 250V
- Series：*
- Mfr：Sanyo
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The Sanyo 2SK2530-TL-E is an N-channel silicon MOSFET designed for ultrahigh-speed switching applications. It features a drain-to-source voltage rating of 250V and a continuous drain current capacity of 10A at 25°C. The device exhibits a maximum on-resistance of 0.39 ohms, supporting efficient power handling. Packaged in a surface-mount TO-252 (DPAK) format with three pins, it integrates a built-in diode. The component operates in enhancement mode with a maximum junction temperature of 150°C, suitable for high-density mounting and miniaturization in electronic end products.
Feature Summary
- Ultrahigh-speed switching capability for rapid signal transitions
- Low on-resistance to minimize conduction losses
- Surface-mountable package enabling high-density mounting and miniaturization
- Built-in diode integration for simplified circuit fabrication
Applications
- Ultrahigh-speed switching circuits
- General-purpose switching devices
- High-density mounting applications requiring miniaturization
Procurement Notes
Verify the specific manufacturer designation, as Sanyo semiconductor assets were acquired by ON Semiconductor. Confirm that the part number corresponds to the original Sanyo specifications or the equivalent ON Semiconductor variant. Ensure the datasheet matches the required electrical parameters, particularly the 250V rating and 0.39 ohm resistance, before finalizing procurement decisions.
Selection Notes
Select this component for applications requiring fast switching speeds and robust voltage handling up to 250V. The low on-resistance makes it suitable for efficiency-critical designs. Consider the TO-252 package constraints for thermal management and PCB layout space. Verify compatibility with control logic levels and ensure the built-in diode characteristics meet the circuit's reverse recovery requirements.
Part Context
This component belongs to the AP Lineup of N-channel MOSFETs from Sanyo Semicon Device. It is categorized under discrete semiconductors and single FETs. The product line emphasizes general-purpose switching with optimized performance for modern electronic systems requiring compact form factors and reliable operation under high-speed conditions.
Replacement Considerations
Check for equivalents from ON Semiconductor following the acquisition of Sanyo's semiconductor business. Verify pinout compatibility and electrical parameter alignment, specifically V_DSS and R_DS(on), when substituting with other 250V N-channel MOSFETs in TO-252 packages.
