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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK2570ZL-TL-E is a silicon N-channel MOS FET designed for low-frequency power switching applications. It features a single configuration with a built-in diode and resistor, housed in a compact SOT-23 package. The device supports an enhancement mode operation with a maximum drain current of 0.2 A and a minimum drain-source breakdown voltage of 20 V. It operates within a temperature range up to 150 °C and has a maximum power dissipation of 0.15 W.
Feature Summary
- N-channel silicon construction optimized for low-frequency power switching
- Integrated internal diode and resistor for simplified circuit design
- Enhancement mode operation suitable for general-purpose switching
Applications
- Low-frequency power switching circuits
- General-purpose electronic devices requiring small signal switching
Procurement Notes
Verify the exact suffix ZL-TL-E against manufacturer documentation to confirm specific binning or tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with Renesas Electronics Corporation or authorized distributors, as availability may vary by region.
Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with integrated passive components. Ensure the 20 V breakdown voltage and 0.2 A current rating meet the circuit requirements. Verify that the SOT-23 package fits the PCB layout constraints and that the thermal dissipation capabilities are sufficient for the operating conditions.
Part Context
This part belongs to the discrete semiconductor transistor category from Renesas Electronics Corporation. It is distinct from the company's microcontroller and MPU lines, such as the RH850 or RZ families, serving instead as a fundamental power switching element in analog and mixed-signal designs.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Generic replacements must match the N-channel type, SOT-23 package, and electrical ratings including 20 V V_DSS and 0.2 A I_D.
