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Product Detailed Parameters
- Description：MOSFET
- Series：*
- Mfr：Sanyo
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK2631-E is an N-channel silicon MOSFET manufactured by Sanyo Semiconductor. It is designed for ultrahigh-speed switching applications, featuring a drain-source voltage rating of 800V and a continuous drain current capacity of 1A. The device offers a maximum power dissipation of 30W and a typical drain-source on-resistance of 10Ω. It is housed in a TO-251 surface-mount package, providing robust performance for high-voltage circuit designs requiring fast switching characteristics.
Feature Summary
- Ultrahigh-speed switching capability optimized for rapid transition times
- High breakdown voltage rating suitable for demanding power environments
- N-channel silicon construction ensuring reliable conduction
Applications
- High-frequency power conversion circuits
- Switching regulators requiring high voltage isolation
- Inverter systems utilizing ultrahigh-speed components
Procurement Notes
Verify the manufacturer origin, as Sanyo's semiconductor operations have undergone corporate restructuring. Confirm the specific suffix (e.g., -E) matches your bill of materials, as it may indicate packaging or tape-and-reel specifications. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability of the original Sanyo manufacturing data.
Selection Notes
Select this component when designing circuits that require both high voltage blocking capability and fast switching speeds. The 800V rating makes it suitable for mains-connected or industrial power supplies. Consider the 10Ω on-resistance for thermal management calculations, as higher resistance may impact efficiency in low-current applications compared to modern alternatives.
Part Context
This part belongs to Sanyo's lineup of ultrahigh-speed switching MOSFETs. The series focuses on reducing switching losses in power electronics. The 2SK2631-E specifically targets applications where traditional MOSFETs might suffer from excessive heat or slow response times due to parasitic capacitances.
Replacement Considerations
Check for direct pin-compatible substitutes with similar Vds and Rds(on) ratings. Verify that any replacement maintains the ultrahigh-speed switching characteristic if timing is critical. Ensure the replacement package matches the TO-251 footprint for board compatibility.
