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Product Detailed Parameters
- Description：2SK2632 - 2.5A, 800V, 4.8OHM, N-
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The onsemi 2SK2632LS-CB11 is an N-channel Power MOSFET designed for high-voltage switching applications. It features a drain-source breakdown voltage (Vds) of 800 V and a continuous drain current (Id) of 2.5 A. The device exhibits a maximum on-resistance (Rds(on)) of 4.8 Ohms at a gate-source voltage of 10 V. Key capacitive parameters include an input capacitance (Ciss) of 550 pF, a reverse transfer capacitance (Crss) of 70 pF, and a total gate charge (Qg) of 15 nC measured at 10 V. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High voltage capability with 800 V drain-source breakdown rating
- Low gate charge characteristics for efficient switching performance
- Robust thermal operation supporting extended temperature ranges
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- Resonant converter topologies
Procurement Notes
Verify the specific suffix CB11 against official datasheets to confirm package type and tape/reel specifications. Confirm RoHS compliance status through manufacturer documentation. Ensure compatibility with existing PCB footprints by validating pinout configurations. Cross-reference part numbers with authorized distributors to avoid counterfeit components. Check for any recent product change notices that may affect electrical parameters or packaging.
Selection Notes
Select this component when high voltage isolation is required alongside moderate current handling capabilities. The 800 V rating suits applications exceeding standard 600 V limits. Consider the 4.8 Ohm on-resistance for efficiency calculations in low-current scenarios. Evaluate the 15 nC gate charge against driver capabilities for optimal switching speed. Ensure thermal management strategies align with the 150°C maximum junction temperature specification.
Part Context
This part belongs to the 2SK2632LS series of N-channel MOSFETs from onsemi. The series is engineered for general-purpose high-voltage switching. It utilizes silicon technology for reliable performance. The component is categorized under discrete semiconductors and field-effect transistors. It serves as a solution for compact power electronics designs requiring high voltage tolerance.
Replacement Considerations
Direct substitutes must match the 800 V Vds, 2.5 A Id, and similar Rds(on) values. Verify pinout compatibility before substitution. Check if alternative packages require adapter solutions. Ensure equivalent gate charge characteristics for circuit stability.
