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Product Detailed Parameters
- Description：MOSFET N-CH 450V 5A TO220FN
- Series：-
- Mfr：Rohm Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：450 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FN
- Package / Case：TO-220-3 Full Pack
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Overview
The 2SK2713 is a silicon N-channel MOSFET designed for switching applications, rated at 450V drain-source voltage and 5A continuous drain current. It features low on-resistance and fast switching speed to enhance efficiency. The device guarantees a gate-source voltage of ±30V, ensuring robust operation. It offers a wide safe operating area (SOA) and facilitates easy drive circuit design and parallel connection.
Feature Summary
- Low on-resistance for efficient power handling
- Fast switching speed for high-frequency performance
- Wide safe operating area (SOA)
- Guaranteed gate-source voltage of ±30V
Applications
- Audio visual equipment
- Office-automation equipment
- Communications devices
- Electrical appliances
- Electronic toys
Procurement Notes
Verify the specific package type and tape/reel specifications against the manufacturer's latest datasheet before ordering. Confirm that the application does not require automotive or medical-grade reliability, as this component is intended for ordinary electronic equipment. Ensure proper thermal management is integrated into the design to maintain junction temperatures within absolute maximum ratings during operation.
Selection Notes
Select this component for general-purpose switching circuits requiring 450V blocking capability and moderate current handling. Its guaranteed ±30V gate-source rating simplifies driver selection compared to standard 20V limits. Consider its wide SOA for inductive load switching. Verify that the required switching frequency aligns with its fast switching characteristics and that parallel operation benefits are necessary for the specific current demands.
Part Context
This part belongs to ROHM's transistor lineup focused on switching performance. It utilizes silicon N-channel MOSFET technology. The product is classified for use in ordinary electronic devices rather than safety-critical systems. It is subject to export control regulations under Japanese law, specifically Annex 1 (Item 16) of the Export Trade Control Order.
Replacement Considerations
Consult ROHM sales representatives for direct substitutes if pin compatibility and electrical parameters must be strictly maintained. No alternative part numbers are explicitly listed in the provided documentation. Ensure any replacement matches the 450V/5A rating and TO-220FM package dimensions if applicable.
