2SK2727-E

$6.19

Description：MOSFET N-CH 500V 10A
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:fdcf955993aa Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 500V 10A
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK2727-E

Overview

The 2SK2727-E is an N-channel silicon MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage rating of 500V and supports a continuous drain current of 10A. The component is housed in a TO-3P package with a flange style, designed for robust thermal management in power switching applications.

Feature Summary

N-channel silicon construction for reliable power switching
High voltage capability suitable for industrial power stages
Flange-mounted package design for efficient heat dissipation

Applications

Industrial motor drives
Power supply inverters
High-voltage switching circuits

Procurement Notes

Verify the specific suffix 'E' against the manufacturer's latest documentation to confirm compliance with RoHS directives or other regional regulatory standards. Ensure the ordering part number matches the exact package variant required for your PCB footprint and thermal interface requirements.

Selection Notes

Select this component when a 500V breakdown voltage and 10A continuous current capacity are required. The TO-3P flange package necessitates mounting on a heatsink or chassis for proper thermal operation. Confirm gate drive compatibility and ensure the application circuit can handle the device's switching characteristics.

Part Context

This single FET belongs to Renesas' discrete power transistor portfolio. It serves as a standalone switching element rather than an integrated driver or array. The TO-3P form factor indicates its use in higher-power scenarios where direct metal-case cooling is preferred over standard surface-mount solutions.

Replacement Considerations

Consult official substitution guides for equivalent N-channel MOSFETs with matching 500V ratings and TO-3P packages. Verify pinout compatibility and thermal resistance values before replacing to ensure system performance remains within specifications.