2SK2731T146

Overview

The 2SK2731T146 is a silicon N-channel small signal MOSFET manufactured by ROHM Semiconductor. It features a maximum drain-source voltage of 30 V and a continuous drain current of 200 mA at 25°C ambient temperature. The device operates in enhancement mode with a low gate drive requirement of 4 V. Key electrical parameters include a maximum on-resistance of 4.5 Ω and a power dissipation capacity of 200 mW. It is housed in an SMT3 (SC-59/SOT-23) surface-mount package.

Feature Summary

• Low on-resistance for efficient conduction
• Fast switching speed capabilities
• Compatible with low-voltage drive circuits at 4 V

Applications

• Audio visual equipment
• Office automation equipment
• Communications devices
• Electronic toys

Procurement Notes

Verify the component status before integration, as documentation indicates this specific part may be designated as not recommended for new designs. Confirm RoHS compliance and lead times directly with authorized distributors or the manufacturer to ensure supply chain stability for existing production lines.

Selection Notes

Select this component for applications requiring a compact N-channel MOSFET with low gate drive voltage requirements. Ensure the design accommodates the 200 mA continuous current limit and 200 mW power dissipation constraints within the specified operating temperature range.

Part Context

This component belongs to the ROHM 2SK2731 series of interface and switching transistors. It utilizes a silicon N-channel structure designed for general-purpose electronic circuits. The '146' suffix denotes the specific SC-59 tape-and-reel packaging configuration used for automated surface-mount assembly.

Replacement Considerations

Consult ROHM sales representatives for verified substitute part numbers if this component is unavailable or discontinued. Do not assume cross-compatibility with other N-channel MOSFETs without verifying pinout and electrical parameter alignment.