2SK2803

$0.75

Description：MOSFET N-CH 450V 3A TO220F
Series：-
Mfr：Sanken Electric USA Inc.
Package：Bulk

SKU:7fb26524db3f Category: Single FETs, MOSFETs Brand: Sanken Electric USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 450V 3A TO220F
Series：-
Mfr：Sanken Electric USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：340 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Download product information

2SK2803

Overview

The Sanken Electric USA Inc. 2SK2803 is a general-purpose N-channel power MOSFET designed for high-voltage switching applications. It features a drain-source voltage (VDSS) of 450 V and a continuous drain current (ID) of 3 A at 25°C case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 2.8 Ω at VGS = 10V and ID = 1.5A, with a typical gate threshold voltage (VTH) of 2.0 V to 4.0 V. Key electrical parameters include a pulsed drain current of 12 A, an avalanche energy rating (EAS) of 30 mJ, and a maximum power dissipation of 30 W at 25°C case temperature. The component operates within a junction temperature range up to 150°C.

Feature Summary

High breakdown voltage capability suitable for demanding power switching environments
Robust single-pulse avalanche energy rating for inductive load protection
Low gate threshold voltage enabling efficient drive from standard logic levels

Applications

General-purpose power switching circuits
Inductive load driving applications
High-voltage DC-DC converter stages

Procurement Notes

Verify the specific package variant required, as the datasheet distinguishes between FM20 (TO-220F) and FM100 (TO-3PF) mechanical dimensions. Confirm that the procurement specification aligns with the 'General product' designation rather than the UL approved version if safety certification is not required. Ensure the design accounts for the 'Not Recommended for New Designs' status when planning long-term production lifecycles.

Selection Notes

Select this component for applications requiring 450 V blocking capability with moderate current handling up to 3 A. Consider the thermal resistance constraints given the 30 W power dissipation limit at 25°C case temperature. Evaluate the 2.8 Ω maximum RDS(on) against efficiency requirements, as higher resistance may result in significant conduction losses compared to modern low-RDS(on) alternatives. Verify compatibility with the available TO-220F or TO-3PF mounting styles.

Part Context

The 2SK2803 belongs to Sanken Electric's portfolio of discrete power semiconductors, specifically categorized as a general-purpose N-channel MOSFET. It is engineered for robust performance in industrial and consumer power electronics where high voltage isolation is critical. The device utilizes silicon gate technology to provide reliable switching characteristics across a wide operating temperature range.