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Product Detailed Parameters
- Description：MOSFET N-CH 900V 1A DP
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PW-MOLD
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The Toshiba Semiconductor and Storage 2SK2845(TE16L1,Q) is a silicon N-channel MOS field-effect transistor utilizing π-MOSIII technology. It features a drain-source voltage rating of 900 V and a continuous DC drain current of 1 A at 25°C, with a peak pulse current capability of 3 A. The device exhibits a typical forward transfer admittance of 0.9 S and a low drain-source ON-resistance of 8.0 Ω at VGS = 10 V. Thermal resistance from channel to case is specified at 3.125 °C/W, supporting a maximum channel temperature of 150°C.
Feature Summary
- High breakdown voltage capability up to 900 V for robust operation in high-voltage switching applications
- Low drain-source ON-resistance characteristic to minimize conduction losses
- Enhanced mode operation with defined gate threshold voltage range for reliable logic-level control
- Integrated body diode with specified reverse recovery characteristics for inductive load handling
Applications
- Chopper regulator circuits
- DC/DC converter topologies
- Motor drive systems
Procurement Notes
Verify the specific ordering suffix TE16L1,Q against official Toshiba documentation to confirm package type and environmental compliance status. Confirm RoHS compatibility directly with the manufacturer or authorized distributor as indicated in the datasheet restrictions section. Ensure design parameters remain within absolute maximum ratings to maintain reliability standards.
Selection Notes
Select this component for designs requiring high-voltage isolation and moderate current handling capabilities. Evaluate thermal management requirements based on the specified channel-to-case thermal resistance. Consider the gate threshold voltage range when designing drive circuits to ensure full enhancement under varying operating temperatures and supply conditions.
Part Context
This part belongs to the 2SK series of silicon N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. The device utilizes π-MOSIII technology to achieve improved performance metrics compared to standard MOS structures. It is designed for general electronics applications including industrial equipment and power supplies, distinct from automotive-grade variants unless explicitly qualified.
Replacement Considerations
Consult official Toshiba substitution guides for verified equivalents. Cross-reference pinouts and electrical characteristics carefully when considering alternatives from other manufacturers to ensure compatibility with existing circuit layouts and thermal constraints.
