2SK2847(F)

Description：MOSFET N-CH 900V 8A TO3PIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:fba6c53b97d1 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 900V 8A TO3PIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.4Ohm @ 4A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：58 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2040 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：85W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P(N)IS
Package / Case：TO-3P-3, SC-65-3

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2SK2847(F)

Overview

The Toshiba 2SK2847(F) is a silicon N-channel MOS type field-effect transistor utilizing π-MOSIII technology. Designed for DC-DC converters and motor drive applications, it features a low drain-source ON resistance of 1.1 Ω (typical) and high forward transfer admittance of 7.0 S (typical). The device supports a maximum drain-source voltage of 900 V and a continuous drain current of 8 A at 25°C case temperature. It includes an internal diode with a reverse recovery time of 1650 ns and operates within a channel temperature range up to 150°C.

Feature Summary

Utilizes π-MOSIII technology for enhanced switching performance
Features built-in diode for freewheeling applications
Designed for high-speed, high-current switching operations

Applications

DC-DC Converters
Motor Drive Applications

Procurement Notes

Verify the specific suffix designation against official Toshiba Semiconductor documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Confirm thermal management requirements align with the specified thermal resistance values for your application design.

Selection Notes

Select this component for high-voltage switching circuits requiring robust avalanche energy handling capabilities. Ensure the gate threshold voltage range suits the driving logic levels. Consider the package thermal characteristics and derating guidelines provided in the reliability handbook for sustained operation under heavy loads.

Part Context

This part belongs to the Toshiba Silicon N Channel MOS Type series, specifically engineered for power switching applications. It represents a discrete semiconductor solution designed to replace older technologies in efficient power conversion systems.

Replacement Considerations

Consult official Toshiba replacement guides for verified substitutes. Cross-reference absolute maximum ratings and pin configurations before implementation.