2SK2866(F)

Description：MOSFET N-CH 600V 10A TO220AB
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:6ab01d18e0e9 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 10A TO220AB
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2040 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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2SK2866(F)

Overview

The 2SK2866(F) is a silicon N-channel MOS field-effect transistor manufactured by Toshiba Semiconductor and Storage. It utilizes π-MOSV technology for high-speed switching applications. The device features a drain-source voltage rating of 600 V and a continuous DC drain current capacity of 10 A at 25°C case temperature. Key electrical characteristics include a typical drain-source on-resistance of 0.54 Ω and a forward transfer admittance of 9.0 S. It supports repetitive avalanche energy ratings up to 12.5 mJ and operates with a maximum channel temperature of 150°C.

Feature Summary

Utilizes π-MOSV technology for enhanced switching performance
Features low drain-source on-resistance for efficient power handling
Supports repetitive avalanche energy operation
Designed for high forward transfer admittance

Applications

Chopper Regulators
DC-DC Converters
Motor Drive Systems

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm package type JEDEC TO-220AB matches design requirements. Review absolute maximum ratings carefully to ensure thermal management meets the specified channel-to-case resistance limits during operation.

Selection Notes

Select this component for designs requiring high-voltage N-channel switching with low conduction losses. Ensure gate drive circuits accommodate the threshold voltage range of 2.0 to 4.0 V. Verify that the application circuit respects the 600 V breakdown limits and manages thermal dissipation within the 125 W power rating constraints.

Part Context

This part belongs to Toshiba's silicon N-channel MOSFET series designed for general electronics and industrial applications. It is distinct from bipolar transistors or diodes in its voltage-controlled operation. The device is intended for use in power conversion systems where fast switching speeds and robust avalanche capability are required.

Replacement Considerations

Consult Toshiba Semiconductor for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, thermal resistance, and electrical parameter alignment.