2SK2869-91L

$1.28

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:075045a09c30 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK2869-91L

Overview

The 2SK2869-91L is an N-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage rating of 60V and a continuous drain current capacity of 20A. The device exhibits a maximum on-resistance of 45mΩ, ensuring efficient power handling with minimal conduction losses. It is housed in a DPAK(S) or TO-252 surface-mount package, designed for robust thermal performance and compact integration in electronic circuits.

Feature Summary

N-channel power MOSFET configuration for switching applications
Low on-resistance for high efficiency
Surface-mount DPAK(S)/TO-252 packaging

Applications

DC-DC converter circuits
Power management systems
Motor control drivers

Procurement Notes

Verify the specific suffix (e.g., -91L) against official Renesas documentation to confirm tape-and-reel specifications and exact pinout compatibility. Ensure the component meets RoHS compliance requirements as indicated in manufacturer records. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component for designs requiring a 60V rated N-channel switch with moderate current handling capabilities. The low on-resistance makes it suitable for applications where conduction loss reduction is critical. Consider the thermal characteristics of the DPAK(S) package when designing heat dissipation strategies for the target circuit environment.

Part Context

This component belongs to the Renesas power MOSFET family, originally developed under NEC Electronics before the merger with Renesas Technology Corporation. The datasheet retains historical references to NEC but is officially issued by Renesas Electronics Corporation. It serves as a discrete semiconductor solution for general-purpose power switching tasks.

Replacement Considerations

Consult official Renesas substitution guides for verified alternatives. Generic equivalents may differ in thermal resistance or gate charge characteristics. Verify pin compatibility and electrical ratings before replacing the original component in existing designs.