2SK2912-90STL-E

$4.85

Description：NCH POWER MOSFET 60V 40A 20MOHM
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:79a6bc452934 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：NCH POWER MOSFET 60V 40A 20MOHM
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK2912-90STL-E

Overview

The 2SK2912-90STL-E is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 40A. The device exhibits a typical on-resistance (RDS(on)) of 20mΩ, optimized for efficient power switching applications. Designed for high-speed operation, this component utilizes silicon technology to deliver reliable performance in demanding electronic circuits requiring robust current handling capabilities.

Feature Summary

N-channel silicon power MOSFET construction
High-speed power switching capability
Low on-resistance for improved efficiency

Applications

DC-DC converter circuits
Motor control systems
Power supply output stages

Procurement Notes

Verify the specific suffix '90STL-E' against official Renesas documentation to confirm tape-and-reel packaging specifications and exact electrical tolerances. Ensure compatibility with existing PCB footprints and thermal management requirements before procurement. Cross-reference the manufacturer part number to avoid confusion with similar variants lacking the precise suffix designation.

Selection Notes

Select this component when a 60V N-channel MOSFET with 40A current capacity is required. The low on-resistance makes it suitable for applications prioritizing conduction loss reduction. Consider the package type and thermal characteristics relative to the system's heat dissipation strategy. Verify gate charge parameters if switching frequency is a critical design constraint.

Part Context

This part belongs to Renesas' lineup of silicon N-channel MOSFETs designed for high-speed power switching. It shares functional similarities with other devices in the 2SK series, such as the 2SK2932-E, which also targets power management applications. These components are integral to modern embedded systems requiring efficient power conversion and motor driving capabilities.

Replacement Considerations

Consult official substitution guides for equivalents like the 2SK2932-E. Verify pinout compatibility and electrical parameter overlaps before implementation. Do not assume interchangeability without confirming datasheet alignment for voltage, current, and resistance ratings.