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Product Detailed Parameters
- Description：MOSFET N-CH 500V 18A TO3PIS
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：270mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3720 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：90W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P(N)IS
- Package / Case：TO-3P-3, SC-65-3
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Overview
The 2SK2917(F) is an N-channel silicon MOSFET designed for high-voltage switching applications. It supports a drain-to-source voltage of 500V and delivers a continuous drain current of 18A at 25°C ambient temperature. The device features a typical on-resistance of 0.21Ω, with a maximum rating of 270mΩ. It operates with a gate-source voltage limit of ±30V and dissipates up to 90W of power when case-temperature controlled. The component is housed in a TO-3P(N)IS package and withstands junction temperatures up to 150°C.
Feature Summary
- N-channel enhancement mode construction for chopper regulator and DC-DC converter circuits
- Low drain-source on-resistance to minimize conduction losses
- Robust thermal performance suitable for motor drive and power supply applications
Applications
- Chopper regulators
- DC-DC converters
- Motor drives
Procurement Notes
Verify the specific suffix (F) against the manufacturer's latest documentation to confirm pinout and packaging details. Note that this component may be listed as obsolete or end-of-life by the manufacturer. Confirm availability through authorized distributors and validate the datasheet version before integration into new designs.
Selection Notes
Select this component for applications requiring 500V blocking capability and moderate current handling in a through-hole package. Ensure the design accounts for the 90W power dissipation limit under case cooling conditions. Verify that the gate drive voltage remains within the ±30V specification to prevent dielectric breakdown.
Part Context
This part belongs to Toshiba's N-channel MOSFET family intended for power switching. The TO-3P(N)IS package provides mechanical stability and thermal conductivity for industrial environments. It serves as a discrete solution for medium-power conversion tasks where surface-mount options are unsuitable.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer for current equivalent recommendations or cross-reference lists.
