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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The Renesas 2SK2932-E is a silicon N-channel single power MOSFET designed for high-speed power switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 10A. The device exhibits a low on-resistance (RDS(on)) of 0.075Ω, ensuring efficient power handling with minimal conduction losses. Packaged in the TO-220CFM format, it provides robust thermal performance suitable for various electronic circuits requiring reliable semiconductor switching capabilities.
Feature Summary
- N-channel silicon construction optimized for high-speed power switching operations
- Low on-resistance characteristic to minimize conduction losses during operation
- Designed for efficient thermal management within standard through-hole packaging
Applications
- High-speed power switching circuits
- DC-DC converter implementations
- Motor control driver stages
Procurement Notes
Verify the specific suffix 'E' against the manufacturer's official datasheet REJ03G1046-0400 to confirm compliance requirements and exact electrical specifications. Ensure the package type matches the required TO-220CFM form factor for your design. Cross-reference the part number with authorized distributors to validate authenticity and current availability status before finalizing procurement decisions.
Selection Notes
Select this component when a 60V N-channel MOSFET with 10A capability is required. The low RDS(on) value makes it suitable for applications prioritizing efficiency. Consider the TO-220CFM package constraints regarding board space and thermal dissipation needs compared to surface-mount alternatives. Verify gate charge characteristics if switching frequency is a critical design parameter.
Part Context
This component belongs to Renesas Electronics Corporation's discrete power semiconductor portfolio. It serves as a fundamental building block for power electronics, specifically targeting applications where moderate voltage ratings and high current handling are necessary. The product line focuses on providing reliable switching solutions for industrial and consumer electronic systems.
Replacement Considerations
Consult the official Renesas datasheet for direct pin-compatible substitutes or functional equivalents within the same voltage and current class. Ensure any replacement maintains the TO-220CFM package dimensions and thermal characteristics to fit existing board layouts without modification.
