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Product Detailed Parameters
- Description：MOSFET N-CH 900V 3A TO220F
- Series：-
- Mfr：Sanken Electric USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F
- Package / Case：TO-220-3 Full Pack
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Overview
The Sanken Electric USA Inc. 2SK2943 is a high-voltage N-channel MOSFET designed for power switching applications. It features a drain-source breakdown voltage of 900 V and a continuous drain current rating of 3 A at 25°C case temperature. The device exhibits a maximum on-resistance of 5.0 Ω at VGS = 10V and ID = 1.5A, with a typical forward transconductance of 2.8 S. Key electrical parameters include a gate-source leakage current of ±100 nA at ±30V, a threshold voltage range of 2.0 to 4.0 V, and an avalanche energy rating of 60 mJ. Capacitance values measured at 1.0 MHz and VDS = 10V are 600 pF (Ciss), 100 pF (Coss), and 40 pF (Crss).
Feature Summary
- High voltage capability with 900 V drain-source breakdown rating.
- Capable of handling continuous drain currents up to 3 A under specified thermal conditions.
- Supports unclamped inductive switching events with a rated avalanche energy of 60 mJ.
Applications
- High-voltage power supply circuits
- Inductive load switching
- Motor drive interfaces
Procurement Notes
Verify the specific package variant required, as the datasheet indicates availability in FM20 (TO-220F) and FM100 (TO-3PF) configurations. Confirm that the selected unit meets the necessary thermal management requirements for the intended operating environment. Ensure compatibility with the driving circuit's voltage levels given the 2.0 V to 4.0 V threshold range. Check for any specific UL approval markings if safety certification is mandated for the end application.
Selection Notes
Select this component when a high-voltage N-channel MOSFET is required for moderate current switching tasks. The 900 V rating makes it suitable for mains-connected or high-side switching applications where standard low-voltage devices would fail. Consider the relatively high on-resistance compared to modern superjunction devices; ensure the thermal design can dissipate the resulting conduction losses. Verify that the gate drive voltage of 10 V is sufficient to achieve the desired low on-state resistance for the specific load current.
Part Context
The 2SK2943 belongs to Sanken Electric's lineup of high-voltage power MOSFETs. These components are engineered for robustness in industrial and consumer power electronics. The device utilizes silicon gate technology to provide fast switching speeds and high input impedance. Its construction supports reliable operation in harsh environments, characterized by a wide junction temperature range from -55°C to +150°C.
Replacement Considerations
No direct public substitute part numbers are documented in the provided source material. When selecting a replacement, ensure the new device matches the 900 V breakdown voltage, 3 A current rating, and compatible pinout configuration of either the TO-220F or TO-3PF package used in the original design.
