2SK2962(T6CANO,F,M

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:0030e6ce9da4 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92MOD
Package / Case：TO-226-3, TO-92-3 Long Body

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2SK2962(T6CANO,F,M

Overview

The Toshiba Semiconductor and Storage 2SK2962 is a silicon N-channel MOS field-effect transistor utilizing L²-π-MOSV technology. It features a 100 V drain-source voltage rating and supports a continuous DC drain current of 1 A, with a pulse capability of 3 A. The device exhibits a typical low drain-source ON resistance of 0.5 Ω at VGS = 4 V and ID = 0.5 A. It operates with a 4-V gate drive and has a threshold voltage ranging from 0.8 to 2.0 V. Packaged in a TO-92MOD (2-5J1C) housing, it is designed for chopper regulators, DC-DC converters, and motor drive applications.

Feature Summary

Utilizes L²-π-MOSV technology for enhanced performance
Supports 4-V gate drive operation
Features low drain-source ON resistance
Provides high forward transfer admittance

Applications

Chopper Regulators
DC-DC Converters
Motor Drive Applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the package designation matches the required JEDEC TO-92MOD or TOSHIBA 2-5J1C form factor. Ensure the component is sourced from authorized distributors to guarantee authenticity and adherence to handling precautions for electrostatic-sensitive devices.

Selection Notes

Select this component when a compact N-channel MOSFET with a 100 V breakdown voltage and 1 A continuous current rating is required. The device is suitable for designs needing a low ON resistance of 0.5 Ω and a fast switching profile. Consider the TO-92MOD package constraints for thermal management, noting the channel-to-ambient thermal resistance of 138 °C/W. Verify that the application logic aligns with general electronics usage restrictions.

Part Context

This part belongs to the Toshiba Semiconductor and Storage discrete semiconductor portfolio, specifically within the Silicon N-Channel MOS Type category. It is engineered using L²-π-MOSV technology to optimize switching characteristics and conduction losses. The component is distinct from other Toshiba series like the TBD load drivers or TLP optocouplers, serving primarily as a power switch element rather than a logic interface or driver IC.