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Product Detailed Parameters
- Description：MOSFET N-CH TO92MOD
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92MOD
- Package / Case：TO-226-3, TO-92-3 Long Body
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Overview
The Toshiba 2SK2962 is a silicon N-channel MOS field-effect transistor designed for chopper regulators, DC-DC converters, and motor drives. It features a JEDEC TO-92MOD package with a drain-source voltage rating of 100 V and a continuous DC drain current of 1 A. The device exhibits a typical drain-source ON resistance of 0.5 Ω at VGS = 4 V and ID = 0.5 A, alongside a high forward transfer admittance of 1.2 S. Gate threshold voltage ranges from 0.8 to 2.0 V, supporting 4-V gate drive applications. Thermal characteristics include a channel-to-ambient thermal resistance of 138 °C/W.
Feature Summary
- Supports 4-V gate drive operation for low-voltage logic compatibility
- Features low drain-source ON resistance for efficient power switching
- Provides high forward transfer admittance for improved gain performance
- Includes an integrated body diode with defined reverse recovery characteristics
Applications
- Chopper regulator circuits
- DC-DC converter designs
- Motor drive systems
Procurement Notes
Verify the specific ordering suffix (e.g., T6WNLF(J)) against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Ensure that the selected variant matches the required packaging and marking conventions specified in the manufacturer's latest product data sheets before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with a 100 V breakdown voltage and 1 A continuous current capability. Consider the 0.5 Ω typical ON resistance and 138 °C/W thermal resistance for thermal management planning. Verify that the 4-V gate drive requirement aligns with the system's control logic levels and that the TO-92MOD package fits the available board space constraints.
Part Context
The 2SK2962 belongs to Toshiba's L²-π-MOSV series of silicon N-channel MOS field-effect transistors. This series is engineered for general-purpose switching applications where moderate voltage ratings and compact packaging are prioritized. The device utilizes enhancement mode technology with a built-in body diode, distinguishing it from discrete switch configurations.
Replacement Considerations
Publicly confirmed substitute part numbers are not provided in the source material. Cross-referencing requires matching the 100 V/1 A rating, TO-92MOD package, and electrical characteristics such as RDS(ON) and Vth specifications.
