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Product Detailed Parameters
- Description：MOSFET N-CH TO92MOD
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92MOD
- Package / Case：TO-226-3, TO-92-3 Long Body
Download product information
Overview
The Toshiba 2SK2989 is a silicon N-channel MOS field-effect transistor utilizing π-MOSVI technology. It features a low drain-source ON resistance of 120 mΩ (typical) at VGS = 10 V and ID = 2.5 A, alongside a high forward transfer admittance of 2.6 S. The device supports a maximum drain-source voltage of 50 V and continuous DC drain current of 5 A. It operates within a channel temperature range up to 150°C and is housed in a JEDEC TO-92MOD package.
Feature Summary
- Utilizes π-MOSVI process for enhanced performance
- Features low drain-source ON resistance
- Provides high forward transfer admittance
- Supports enhancement-mode operation
Applications
- Chopper regulators
- DC-DC converters
- Motor drive circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the component is suitable for general electronics applications and not intended for unintended uses requiring extraordinary reliability levels. Ensure proper handling precautions are observed due to electrostatic sensitivity.
Selection Notes
Select this component for applications requiring low conduction losses and fast switching characteristics within a 50 V voltage rating. Consider the thermal resistance of 138 °C/W when designing heat dissipation strategies for the TO-92MOD package. Evaluate the gate threshold voltage range of 1.0 to 2.2 V to ensure compatibility with the driving logic levels.
Part Context
This part belongs to the family of silicon N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. It is designed using the π-MOSVI process technology, which optimizes the trade-off between ON resistance and switching speed. The device is packaged in a standard TO-92MOD form factor suitable for surface mount or through-hole integration depending on the specific board design.
Replacement Considerations
Consult official Toshiba documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical ratings, and package dimensions.
