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Product Detailed Parameters
- Description：MOSFET N-CH TO92MOD
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92MOD
- Package / Case：TO-226-3, TO-92-3 Long Body
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Overview
The Toshiba 2SK2989 is a silicon N-channel MOS field-effect transistor utilizing π-MOSVI technology, designed for chopper regulators, DC-DC converters, and motor drive applications. It features a low drain-source ON resistance of 120 mΩ (typical) at VGS=10V and ID=2.5A, alongside a high forward transfer admittance of 2.6 S. The device operates with a drain-source voltage rating of 50V and supports continuous drain currents up to 5A. Key electrical characteristics include a gate threshold voltage range of 1.0 to 2.2V and a maximum leakage current of 100 μA.
Feature Summary
- Utilizes π-MOSVI technology for enhanced switching performance
- Features low drain-source ON resistance for improved efficiency
- Provides high forward transfer admittance for robust drive capability
- Designed specifically for chopper regulators and DC-DC converter circuits
Applications
- Chopper Regulator circuits
- DC-DC Converter designs
- Motor Drive systems
Procurement Notes
Verify the specific ordering suffix J(T6F) against official Toshiba Semiconductor and Storage documentation to confirm package type and environmental compliance status. Ensure that design parameters remain within absolute maximum ratings, particularly regarding channel temperature limits and thermal resistance derating curves. Consult the manufacturer's reliability handbook for appropriate handling precautions and electrostatic discharge protection measures during assembly.
Selection Notes
Select this component when designing low-voltage power stages requiring efficient switching with minimal conduction losses. The 50V rating suits applications where input voltages are moderate, while the TO-92MOD package offers a compact footprint for space-constrained boards. Evaluate thermal management requirements based on the specified junction-to-ambient thermal resistance to ensure reliable operation under continuous load conditions.
Part Context
This part belongs to Toshiba's discrete semiconductor lineup focusing on general-purpose switching applications. The π-MOSVI process technology distinguishes it by offering optimized trade-offs between ON resistance and switching speed. It serves as a fundamental building block in power management integrated circuits and standalone driver stages within consumer electronics and industrial control equipment.
Replacement Considerations
Consult official Toshiba cross-reference lists for verified substitutes. Ensure any replacement maintains compatible pinout configurations, voltage ratings, and thermal characteristics suitable for the existing PCB layout and cooling infrastructure.
