2SK2993(TE24L,Q)

Description：MOSFET N-CH 250V 20A TO220SM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)

SKU:5c9b38673b34 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 250V 20A TO220SM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：100 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4000 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-220SM
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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2SK2993(TE24L,Q)

Overview

The Toshiba 2SK2993 is a silicon N-channel MOSFET utilizing π-MOSV technology, designed for chopper regulators, DC-DC converters, and motor drives. It features a drain-source voltage of 250 V and a continuous drain current of 20 A at 25°C. The device exhibits a typical on-resistance of 82 mΩ and a forward transfer admittance of 20 S. Thermal resistance from channel to case is 1.25 °C/W, with a maximum channel temperature of 150°C.

Feature Summary

Utilizes π-MOSV silicon technology for enhanced performance in power switching applications.
Features low drain-source on-resistance and high forward transfer admittance for efficient conduction.
Capable of handling repetitive avalanche energy and pulse currents suitable for inductive loads.

Applications

Chopper Regulators
DC-DC Converters
Motor Drive Circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm environmental compliance status, such as RoHS compatibility. Confirm package markings and lot number formatting requirements before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring a 250 V rating and robust thermal management capabilities. Ensure gate drive voltages remain within ±20 V limits. Evaluate thermal resistance parameters to maintain channel temperatures below the 150°C maximum during operation.

Part Context

This part belongs to Toshiba's discrete semiconductor lineup featuring π-MOSV technology. It is categorized as an N-channel enhancement mode field-effect transistor intended for general electronics and specific power control applications defined in the product documentation.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official distributor databases or Toshiba technical support for verified cross-reference options.