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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100MA UMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
- Rds On (Max) @ Id, Vgs：8Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：UMT3
- Package / Case：SC-70, SOT-323
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Overview
The 2SK3018T106 is a silicon N-channel MOSFET designed for low voltage drive applications. It features a 30V drain-source breakdown voltage and a continuous drain current of 100mA. The device supports operation with a gate-source voltage of ±20V and includes an integrated gate protection diode. Packaged in the UMT3 (SOT-323) surface-mount format, it offers fast switching speeds and low on-resistance.
Feature Summary
- Low on-resistance for efficient power handling
- Fast switching speed suitable for high-frequency circuits
- Compatible with 2.5V logic drive levels
- Integrated gate protection diode against static electricity
Applications
- Interfacing circuits
- Switching applications up to 30V and 100mA
- Portable equipment requiring low voltage drive
Procurement Notes
Verify the component status before procurement as this specific part number may be designated as not recommended for new designs. Confirm that the T106 suffix corresponds to the required taping packaging specifications. Ensure compatibility with the UMT3 footprint during PCB layout validation.
Selection Notes
Select this component when a small form factor N-channel MOSFET is required for portable devices. It is suitable for interfacing tasks where simple drive circuits are preferred. Consider its thermal resistance limits and absolute maximum ratings to ensure safe operation within the specified temperature range.
Part Context
This component belongs to Rohm Semiconductor's series of small switching transistors. It utilizes a silicon N-channel structure optimized for low voltage drive environments. The device is manufactured using standard surface-mount technology compatible with automated assembly processes.
Replacement Considerations
Direct replacements include the 2SK3019 and UM6K1N from Rohm. Other potential substitutes across manufacturers include EM6K1, QS5U17, and QS5U12, provided they meet the 30V and 100mA requirements.
