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The 2SK3019HE3-TP is an N-channel enhancement mode MOSFET manufactured by Micro Commercial Components (MCC). It utilizes silicon technology and is housed in a SOT-523-3 surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 30 V, a continuous drain current of 100 mA, and a maximum gate-source voltage of ±20 V. The device features a typical on-resistance of 8 Ohms and a gate threshold voltage of 800 mV. Power dissipation is rated at 150 mW, with an operating temperature range from -55°C to +150°C.
Verify the specific HE3 suffix against the manufacturer's datasheet to confirm environmental compliance details. Ensure the SOT-523-3 footprint matches the PCB layout requirements. Confirm availability status as distribution channels may report limited stock or regional restrictions. Cross-reference the MCC part number with equivalent offerings if supply chain constraints exist.
Select this component for applications requiring low current handling within a minimal footprint. The 8 Ohm on-resistance limits suitability for high-current loads. Evaluate thermal management capabilities given the 150 mW power dissipation rating. Consider the 30 V breakdown voltage when designing circuits with higher supply rails.
This part belongs to the 2SK3019 series of small-signal MOSFETs produced by Micro Commercial Components. The series focuses on compact, efficient switching solutions for consumer electronics. The HE3 designation typically indicates lead-free and halogen-free compliant materials, aligning with modern environmental standards for electronic components.
The 2SK3019-TP is a verified alternative within the same product family offering identical electrical characteristics and pinout compatibility.