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Product Detailed Parameters
- Description：MOSFET N-CH 100V 8A U-G1
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：230mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：290 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 15W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-G1
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The Panasonic 2SK303000L is a silicon N-channel power MOSFET designed for high-speed switching applications. It features low ON resistance and low-voltage drive capability, ensuring efficient operation in various electronic circuits. The device guarantees avalanche energy capability and exhibits no secondary breakdown, enhancing reliability under transient conditions. With a drain-source voltage rating of 100 V and continuous drain current up to 8 A, it supports demanding load requirements. The component operates within a channel temperature range up to 150 °C and complies with the RoHS Directive.
Feature Summary
- Guaranteed avalanche energy capability for robust transient handling
- High-speed switching performance with low ON resistance
- Low-voltage drive compatibility for efficient control logic integration
- Elimination of secondary breakdown effects for improved stability
Applications
- Non-contact relay systems
- Solenoid drive circuits
- Motor drive implementations
- Control equipment modules
- Switching mode regulators
Procurement Notes
Verify the specific lifecycle status before procurement, as this component falls under maintenance or discontinued categories. Confirm that the SC-63 U-G1 package dimensions align with your PCB footprint requirements. Ensure design parameters remain within absolute maximum ratings to prevent failure. Consult official documentation for the most recent product standards and availability updates prior to finalizing orders.
Selection Notes
Select this MOSFET for designs requiring high-speed switching with low conduction losses. The 100 V drain-source voltage provides adequate headroom for standard low-voltage power applications. Consider the thermal resistance values when designing heat dissipation strategies. The guaranteed avalanche energy makes it suitable for inductive load driving where voltage spikes are common during switching transitions.
Part Context
This component belongs to the Panasonic silicon N-channel power MOSFET series, engineered for general-purpose electronic equipment. It utilizes an EIAJ SC-63 U-G1 package to facilitate surface-mount assembly. The device is intended for standard applications such as office equipment, communications gear, and measuring instruments, adhering to established industrial reliability standards.
Replacement Considerations
Consult official Panasonic resources for verified substitute part numbers. Cross-referencing requires matching electrical characteristics including voltage ratings, current capacity, and package type. Verify compatibility with existing circuit designs before implementing any alternative components.
