ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 100V 15A U-G1
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：135mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 20W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-G1
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The Panasonic 2SK3031 is a silicon N-channel power MOSFET designed for high-speed switching applications. It features low ON resistance and low-voltage drive capability, ensuring efficient operation. The device guarantees avalanche energy capability and exhibits no secondary breakdown, enhancing reliability under stress. Key electrical parameters include a drain-source voltage of 100 V, a continuous drain current of ±15 A, and a peak drain current of ±45 A. Power dissipation is rated at 20 W at 25°C ambient temperature, with a channel temperature limit of 150°C.
Feature Summary
- Guaranteed avalanche energy capability
- High-speed switching performance
- Low ON resistance Ron
- No secondary breakdown
Applications
- Non-contact relay
- Solenoid drive
- Motor drive
- Control equipment
- Switching mode regulator
Procurement Notes
Verify the specific lifecycle status before procurement, as this component may be classified under maintenance or discontinued types. Consult official Panasonic semiconductor channels for the most up-to-date availability information. Ensure compliance with RoHS directives if required by your application standards. Confirm that the SC-63 package dimensions match your PCB layout requirements prior to ordering.
Selection Notes
Select this MOSFET for circuits requiring fast switching speeds and robust handling of inductive loads due to its avalanche rating. Consider the thermal resistance values when designing heat dissipation strategies, especially given the 20W power dissipation limit. Verify that the gate threshold voltage aligns with your control logic levels. Ensure operating conditions remain within absolute maximum ratings to prevent device failure.
Part Context
This component belongs to the category of silicon N-channel power MOSFETs manufactured by Panasonic Electronic Components. It is housed in an EIAJ SC-63 U-G1 package. The device is intended for standard applications such as office equipment, communications gear, measuring instruments, and household appliances, rather than specialized aerospace or life-support systems.
Replacement Considerations
Consult official Panasonic documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical characteristics, and package dimensions against the original datasheet specifications.
FAQ
What is the guaranteed avalanche energy capability?
The avalanche energy capability (EAS) is guaranteed at 7.2 mJ under specified test conditions.
What is the maximum peak drain current?
The maximum peak drain current (IDP) is rated at ±45 A.
Is this device suitable for aerospace applications?
No, it is intended for standard electronic equipment. Special applications like aerospace require exceptional quality and reliability not covered by this product's standard designation.
