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Product Detailed Parameters
- Description：MOSFET N-CH 600V 2A CPT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：25.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：280 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：20W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：CPT3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The ROHM Semiconductor 2SK3050 is a silicon N-channel MOS field effect transistor designed for switching applications. It features a drain-source voltage of 600V and continuous drain current of 2A. The device has a typical static drain-source on-state resistance of 4.4Ω at VGS=10V. Total gate charge is typically 12.8nC, with turn-on delay time of 12ns and fall time of 105ns under specified pulse conditions. Power dissipation reaches 20W at Tc=25°C.
Feature Summary
- N-channel silicon MOSFET structure optimized for high-voltage switching operations
- Capable of handling pulsed drain currents up to 6A with short pulse widths
- Integrated body diode with defined reverse recovery characteristics
Applications
- General purpose switching circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm that the component meets RoHS compliance requirements for your target market. Check the datasheet revision date to ensure you are referencing the most current electrical characteristics and absolute maximum ratings before finalizing procurement orders.
Selection Notes
Select this component when a 600V breakdown voltage is required for N-channel switching. Ensure the thermal design accommodates the 6.25°C/W junction-to-case thermal resistance. Verify that the gate drive voltage supports the 10V threshold for optimal RDS(on) performance. Consider the 2A continuous current limit and pulsed capabilities for load matching.
Part Context
This part belongs to the discrete semiconductor transistor category, specifically within the MOSFET sub-classification. It is manufactured by ROHM Semiconductor using silicon technology. The device is packaged in a configuration suitable for surface mount or through-hole mounting depending on the specific package variant associated with the full ordering number.
Replacement Considerations
Consult official ROHM replacement guides for direct substitutes. Verify pinout compatibility and electrical parameter equivalence if cross-referencing with other manufacturers' parts.
