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Product Detailed Parameters
- Description：2SK3057 - POWER TRS2
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3057-AZ is an N-channel power MOSFET designed for high-current switching applications. It features a low on-state resistance of 17 mΩ maximum at VGS=10V and ID=23A, and 27 mΩ maximum at VGS=4V and ID=23A. The device includes a built-in gate protection diode and has a typical input capacitance (Ciss) of 2100 pF. It is housed in an isolated TO-220 package.
Feature Summary
- Low on-state resistance for efficient power switching
- Built-in gate protection diode for enhanced reliability
- Isolated TO-220 package design
Applications
- High current switching applications
Procurement Notes
Verify the specific suffix -AZ against the manufacturer's official documentation to confirm exact electrical tolerances and packaging variations. Ensure the component matches the isolated TO-220 package specification required for your thermal management design. Cross-reference the datasheet revision date to guarantee compatibility with current manufacturing standards.
Selection Notes
Select this component when low conduction losses are critical in high-current circuits. The integrated gate protection diode simplifies circuit design by reducing external component count. Consider the thermal performance of the isolated TO-220 package for heat dissipation requirements in industrial environments.
Part Context
This part belongs to Renesas Electronics' (formerly NEC) lineup of N-channel power MOSFETs. It is engineered for robust performance in industrial settings where high current handling and reliable switching are necessary. The device represents a standard solution for power management tasks requiring efficient energy conversion.
Replacement Considerations
Check for direct substitutes like the 2SK3056 or other NEC/Renesas N-channel MOSFETs with similar RDS(on) and package types. Verify pinout compatibility and thermal characteristics before substitution.
