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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100MA SMINI3-F2
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：50Ohm @ 10mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SMini3-F2
- Package / Case：SC-85
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Overview
The Panasonic 2SK3064 is a silicon N-channel MOSFET designed for switching circuits, specifically targeting rechargeable battery packs such as Li-ion units. It features a high gate-source voltage rating of ±20 V and a low gate threshold voltage. The device operates within a drain-source voltage range of 30 V and supports a continuous drain current of 100 mA with a peak capacity of 200 mA. Power dissipation is rated at 150 mW, with a channel temperature limit of 150 °C. The component utilizes an EIAJ SC-70 SMini3-G1 package.
Feature Summary
- High gate-source voltage tolerance for robust switching control
- Low gate threshold voltage enabling efficient drive characteristics
- Designed for compact rechargeable battery pack applications
Applications
- Rechargeable battery packs
- Lithium-ion battery management systems
- General electronic equipment switching circuits
Procurement Notes
Verify the current lifecycle status before procurement, as the datasheet indicates maintenance or discontinuation stages. Consult official Panasonic semiconductor channels for the latest availability and product standards. Ensure compliance with RoHS directives and handle the device as electrostatic sensitive. Confirm that the specific ordering suffix matches the required packaging and marking specifications.
Selection Notes
Select this component for low-power switching applications requiring a small form factor. The 30 V drain-source voltage and 100 mA current rating suit portable electronics. Consider the low gate threshold voltage for compatibility with standard logic levels. Evaluate thermal performance against the 150 mW dissipation limit in the SC-70 package. Verify suitability for the intended operating temperature range.
Part Context
This part belongs to Panasonic's silicon MOSFET portfolio for small signal applications. It is engineered for reliability in consumer and industrial electronics. The SC-70 package allows for space-constrained designs. The device adheres to Japanese Industrial Standard measurement methods for transistor characteristics.
Replacement Considerations
No public substitute part numbers are documented in the provided source material. Consult Panasonic technical support for cross-reference recommendations if this component is discontinued.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum rating for gate-source voltage (drain open) is ±20 V.
Is this device suitable for automotive safety applications?
No. The documentation specifies use for standard applications like household appliances and office equipment. It is not intended for special applications such as automobiles where failure may jeopardize life.
