2SK3068(TE24L,Q)

Description：MOSFET N-CH 500V 12A TO220SM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)

SKU:b1922b7f3dc1 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 500V 12A TO220SM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：520mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2040 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-220SM
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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2SK3068(TE24L,Q)

Overview

The Toshiba 2SK3068 is a silicon N-channel MOS type (π-MOSV) field effect transistor designed for chopper regulators, DC-DC converters, and motor drives. It features a drain-source voltage of 500 V and a continuous DC drain current of 12 A at 25°C. The device exhibits a typical low drain-source ON-resistance of 0.4 Ω and a high forward transfer admittance of 9.0 S. Thermal resistance from channel to case is 1.25 °C/W, with a maximum channel temperature of 150°C.

Feature Summary

Utilizes π-MOSV technology for enhanced performance in power switching applications
Features low drain-source ON-resistance to minimize conduction losses
Provides high forward transfer admittance for efficient signal control
Supports repetitive avalanche energy ratings for robust operation

Applications

Chopper regulators
DC-DC converters
Motor drive circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the package marking aligns with the required lot number indication format. Ensure design parameters respect the absolute maximum ratings to maintain reliability under heavy loads.

Selection Notes

Select this component for applications requiring high voltage handling up to 500 V and significant current capacity. Consider the thermal characteristics, specifically the channel-to-case resistance, when designing heat dissipation solutions. Evaluate the gate threshold voltage range to ensure compatibility with the intended logic or driver circuitry levels.

Part Context

This part belongs to the Toshiba silicon N-channel MOSFET family utilizing π-MOSV technology. It is distinct from standard MOSFETs by its optimized structure for high-speed switching and low on-resistance. The device is packaged in a TOSHIBA 2-10S1B or 2-10S2B configuration, weighing approximately 1.5 g.