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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK3109-AZ is an N-channel silicon power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of 200V and a continuous drain current rating of 10A. The device exhibits a maximum on-state resistance of 0.4 ohms at 10V gate drive. Packaged in a TO-262AA (TO-262) three-pin inline configuration, it includes avalanche energy ratings of 35 mJ. The component is designed for industrial and consumer applications.
Feature Summary
- N-channel metal-oxide semiconductor construction
- Low on-state resistance for efficient switching
- Avalanche rated capability
- Built-in diode configuration
Applications
- Industrial equipment
- Consumer electronics
- Power switching circuits
Procurement Notes
Verify the specific suffix designation when ordering, as variants such as -S, -AZ, and -Z-E1 exist with potentially different packaging or qualification levels. Confirm lead compliance status, as some versions are noted as non-compliant. Ensure the required package type matches the target PCB footprint. Cross-reference official Renesas documentation to confirm the exact electrical parameters and thermal characteristics for the specific suffix purchased.
Selection Notes
Select this component for applications requiring a 200V blocking voltage and 10A current handling capacity. The 0.4 ohm on-resistance makes it suitable for moderate power switching tasks where efficiency is important but ultra-low resistance is not critical. Consider the TO-262 package for through-hole mounting requirements. Evaluate the avalanche rating if inductive load switching is anticipated.
Part Context
This part belongs to the Renesas 2SK series of N-channel power MOSFETs. The series is characterized by low on-state resistance and robust performance for general-purpose power switching. The 2SK3109 variant specifically targets industrial and consumer markets, offering a balance of voltage rating and current capacity in a standard through-hole package.
Replacement Considerations
Direct substitutes include other 200V, 10A N-channel MOSFETs in TO-262 packages from various manufacturers. Verify pinout compatibility and ensure the replacement meets or exceeds the 0.4 ohm RDS(on) specification. Check for equivalent avalanche energy ratings if operating conditions involve inductive loads.
