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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3109-Z-E1-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage (VDSS) of 200V and a maximum on-state resistance (RDS(ON)) of 400mΩ at a gate-source voltage of 10V. The device utilizes a TO-263/D2PAK package with MP-25Z lead frame, measuring 10mm x 8mm x 4.8mm. It contains three leads and is supplied in embossed tape packaging for automated assembly.
Feature Summary
- N-channel switching architecture designed for high-frequency operation
- Low on-state resistance for efficient power handling
- Robust thermal design suitable for industrial and consumer applications
Applications
- Matching networks
- Final-stage amplifiers
- Industrial equipment
- Consumer electronics
Procurement Notes
Verify the complete part number including suffixes to ensure correct packaging and specifications. Confirm that the TO-263/D2PAK package dimensions align with your PCB footprint requirements. Check official Renesas documentation for detailed electrical characteristics and thermal limits before finalizing the design.
Selection Notes
Select this component for applications requiring 200V blocking capability and moderate current switching. The 400mΩ RDS(ON) specification influences conduction losses. Ensure the operating environment supports the specified temperature range and that the D2PAK package fits the available board space.
Part Context
This device belongs to the 2SK3109 series of N-channel power MOSFETs from Renesas. It is engineered for stable gain and reliable performance in RF and power switching contexts. The series targets designs needing compact solutions with defined voltage ratings.
Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Ensure any replacement matches the 200V VDSS rating and compatible package type.
