2SK3127(TE24L,Q)

Description：MOSFET N-CH 30V 45A TO220SM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)

SKU:08505eaaeb09 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 45A TO220SM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：65W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-220SM
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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2SK3127(TE24L,Q)

Overview

The 2SK3127(TE24L,Q) is a silicon N-channel MOS type field effect transistor manufactured by Toshiba Semiconductor and Storage. It utilizes the π-MOS VI process technology to deliver high-speed switching capabilities suitable for high-current applications. The device features low drain-source ON resistance, high forward transfer admittance, and low leakage current characteristics. Designed as an enhancement-mode device, it supports chopper regulators, DC-DC converters, and motor drive applications.

Feature Summary

High-speed switching performance optimized for high-current operations
Low drain-source ON resistance for efficient power handling
High forward transfer admittance ensuring effective signal control
Low leakage current specifications under defined voltage conditions

Applications

Chopper regulator circuits
DC-DC converter systems
Motor drive applications

Procurement Notes

Verify the specific ordering suffix TE24L against official Toshiba documentation to confirm package type and reel configuration. Ensure compatibility with required thermal management solutions given the high-current switching nature of the component. Cross-reference absolute maximum ratings with system operating limits to prevent overstress conditions during procurement validation.

Selection Notes

Select this component when designing circuits requiring high-speed N-channel MOSFET switching with low conduction losses. The π-MOS VI technology offers advantages in switching efficiency compared to standard MOS types. Consider the threshold voltage range and gate charge requirements relative to the driving circuit capabilities for optimal performance in power conversion topologies.

Part Context

This part belongs to the 2SK3127 series of N-channel MOS type transistors from Toshiba. The series is characterized by the use of advanced π-MOS VI process technology. These devices are engineered specifically for power switching applications where speed and current handling are critical parameters. The manufacturer provides detailed electrical characteristics to support design integration into various power electronic systems.