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The 2SK3161STR-E is an N-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of 200 V and a continuous drain current of 15 A. The device has a typical on-resistance of 115 mΩ and a maximum power dissipation of 75 W. It is housed in an LDPAK(S)-(1) surface-mount package with four leads, designed for high-efficiency switching applications.
Verify the manufacturer part number matches exactly 2SK3161STR-E. Confirm the package type is LDPAK(S)-(1). Ensure compliance with RoHS standards as indicated in official documentation. Check for lead-free certification if required by specific assembly processes.
Select this component for designs requiring a 200 V N-channel MOSFET with 15 A current capability. The LDPAK(S)-(1) package suits surface-mount PCB layouts. Consider the 115 mΩ on-resistance for thermal management in power circuits.
This part belongs to Renesas' discrete semiconductor transistor lineup. It is a single FET power MOSFET. The manufacturer is Renesas Electronics Corporation, formed from the merger of NEC Electronics and Renesas Technology.
The 2SK3161S is a related variant within the same product family. Verify pinout and electrical specifications before substitution.