2SK327700L

$0.74

Description：MOSFET N-CH 200V 2.5A U-G1
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ef5d4cd5361d Category: Single FETs, MOSFETs Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 2.5A U-G1
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.7Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：170 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1W (Ta), 10W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-G1
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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2SK327700L

Overview

The Panasonic 2SK327700L is a silicon N-channel power MOSFET housed in an EIAJ SC-63 U-G1 package. It features a drain-source voltage rating of 200 V and a continuous drain current of ±2.5 A at 25°C, with a peak current capability of ±5 A. The device guarantees avalanche energy capability of 15 mJ and exhibits high-speed switching characteristics without secondary breakdown. Key electrical parameters include a maximum gate-source voltage of ±20 V, a typical forward transfer admittance of 1.3 S, and a channel-to-case thermal resistance of 12.5 °C/W.

Feature Summary

Guaranteed avalanche energy capability for robust operation under transient conditions
High-speed switching performance suitable for efficient power conversion applications
Elimination of secondary breakdown effects to enhance operational reliability

Applications

Non-contact relay circuits
Solenoid drive systems
Motor drive control units
Switching mode regulators

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details and availability status. Confirm compliance requirements such as RoHS directives during procurement. Consult manufacturer resources for the most up-to-date product standards before finalizing design integration or purchasing decisions.

Selection Notes

Select this component for designs requiring a 200 V N-channel MOSFET with moderate current handling capabilities. Ensure thermal management strategies account for the specified thermal resistance values. Verify that the operating voltage and current limits remain within the guaranteed safe operating area for the intended application environment.

Part Context

This part belongs to the Panasonic silicon N-channel power MOSFET family designed for general electronic equipment. It utilizes the SC-63 U-G1 surface mount package. The device is intended for standard applications including office equipment, communications gear, and measuring instruments, rather than specialized automotive or aerospace sectors.

Replacement Considerations

Consult official manufacturer channels for confirmed substitute part numbers. Do not assume cross-compatibility based on generic specifications alone. Verify pinout alignment and electrical ratings before implementing any alternative components in existing designs.