2SK3309(TE24L,Q)

Description：MOSFET N-CH 450V 10A TO220SM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)

SKU:11f0fa46fc87 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 450V 10A TO220SM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：650mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：23 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：65W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-220SM
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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2SK3309(TE24L,Q)

Overview

The Toshiba Semiconductor and Storage 2SK3309(TE24L,Q) is a silicon N-channel MOS field-effect transistor utilizing π-MOSV technology. It features a drain-source voltage rating of 450 V, a continuous DC drain current of 10 A, and a pulse drain current of 40 A. The device exhibits a typical drain-source ON resistance of 0.48 Ω at VGS = 10 V and ID = 5 A, with a maximum forward transfer admittance of 4.3 S. It operates within a channel temperature range up to 150 °C and includes avalanche energy ratings of 222 mJ (single pulse) and 6.5 mJ (repetitive).

Feature Summary

Utilizes π-MOSV structure for low on-resistance and high-speed switching performance.
Features enhanced-mode operation with a gate threshold voltage between 3.0 V and 5.0 V.
Provides robust avalanche capability with defined single-pulse and repetitive energy ratings.

Applications

Switching regulator circuits
General electronics applications including computers and office equipment

Procurement Notes

Verify the TE24L,Q suffix against official Toshiba documentation to confirm specific tape-and-reel packaging or automotive-grade qualification requirements. Ensure compliance with RoHS directives and export control regulations applicable to your region before procurement.

Selection Notes

Select this component for high-voltage switching applications requiring moderate current handling. Evaluate thermal management based on the 1.92 °C/W junction-to-case thermal resistance. Confirm that the 450 V breakdown voltage aligns with system transient requirements and that the 10 A continuous current rating meets load demands.

Part Context

This part belongs to Toshiba's silicon N-channel MOSFET portfolio designed for industrial and general-purpose switching. It is packaged in a JEDEC-standard TO-220AB format, suitable for through-hole mounting. The device is intended for use in environments where standard reliability standards apply, excluding unintended high-risk applications.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Cross-reference absolute maximum ratings, specifically the 450 V drain-source voltage and 10 A continuous current limits, to ensure functional compatibility in existing designs.