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Product Detailed Parameters
- Description：MOSFET N-CH 500V 12A TO220NIS
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：620mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2040 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220NIS
- Package / Case：TO-220-3 Full Pack
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Overview
The 2SK3313(Q) is a silicon N-channel MOS type field effect transistor manufactured by Toshiba Semiconductor and Storage. It features a built-in high-speed free-wheeling diode with a typical reverse recovery time of 90 ns. The device supports a drain-source voltage of 500 V and a continuous DC drain current of 12 A, with a pulse rating of 48 A. Typical electrical characteristics include a drain-source ON-resistance of 0.5 Ω and a forward transfer admittance of 8.5 S. Gate threshold voltage ranges from 2.0 to 4.0 V, while maximum leakage current is 100 μA at 500 V.
Feature Summary
- Built-in high-speed free-wheeling diode for efficient commutation
- Low drain-source ON-resistance for reduced conduction losses
- High forward transfer admittance for improved switching performance
- Low leakage current under high voltage conditions
Applications
- Chopper Regulator Applications
- DC-DC Converter Applications
- Motor Drive Applications
Procurement Notes
Verify the specific ordering suffix (Q) against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm package marking details and lot number indications prior to procurement. Ensure design accounts for absolute maximum ratings and thermal derating requirements specified in the reliability handbook.
Selection Notes
Select this component for circuits requiring high-voltage handling up to 500 V combined with integrated freewheeling capabilities. Evaluate thermal resistance values to ensure adequate heat dissipation within the 150 °C channel temperature limit. Consider the gate threshold voltage range when designing drive circuits to ensure reliable enhancement mode operation across varying temperatures.
Part Context
This part belongs to the Toshiba Silicon N Channel MOS Type (π−MOSV) family. It is designed specifically for power switching applications where fast recovery characteristics are critical. The device utilizes a flange mount package suitable for direct heatsinking, distinguishing it from surface-mount alternatives in the same voltage class.
Replacement Considerations
Consult official Toshiba substitution lists for verified equivalents. Cross-referencing requires matching 500 V rating, 12 A current capacity, and integrated diode specifications.
