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Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK3353(0)-Z-E1-AZ is an N-channel power MOSFET designed for high-current switching applications. It features a maximum drain-to-source voltage of 60 V and a continuous drain current of 82 A at 25°C case temperature. The device exhibits super low on-state resistance, with RDS(on)1 specified at 9.5 mΩ maximum (VGS = 10 V, ID = 41 A) and RDS(on)2 at 14 mΩ maximum (VGS = 4 V, ID = 41 A). Total power dissipation reaches 95 W at 25°C case temperature. Input capacitance is typically 4650 pF.
Feature Summary
- Super low on-state resistance optimized for high efficiency in high-current switching environments
- Built-in gate protection diode to safeguard against electrostatic discharge events
- Low input capacitance to support faster switching transitions
Applications
- High current switching circuits
- Power supply modules
- Industrial motor control systems
Procurement Notes
Verify the specific ordering suffix matches the required package type, as the base part number corresponds to multiple packages including TO-220AB, TO-262, TO-263, and TO-220SMD. Confirm the quality grade aligns with the intended application category before purchase. Contact Renesas Electronics sales offices for the most current product information and availability status.
Selection Notes
Select this component based on its 60 V breakdown voltage and 82 A continuous current capability. Ensure the thermal design accommodates the 95 W total power dissipation rating at the expected case temperature. Consider the low on-state resistance values for minimizing conduction losses in high-current paths.
Part Context
This component belongs to the 2SK3353 series of N-channel MOS Field Effect Transistors manufactured by Renesas Electronics Corporation. The series includes variants available in different surface-mount and through-hole packages such as TO-220AB, TO-262, and TO-263. These devices are engineered specifically for robust performance in demanding power switching applications.
Replacement Considerations
Direct substitutes include other 2SK3353 variants with different package suffixes such as 2SK3353-ZJ for TO-263 or 2SK3353-S for TO-262. Verify pinout compatibility and thermal characteristics when substituting between package types.
