ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：2SK3354-AZ - SWITCHING N-CHANNEL
- Series：-
- Mfr：Renesas
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：106 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6300 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta), 100W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Download product information
Overview
The Renesas 2SK3354-AZ is an N-channel single power MOSFET designed for high-current switching applications. It features a maximum drain-source voltage of 60 V and a continuous drain current rating of 83 A at case temperature, with a peak pulsed current capability of 332 A. The device exhibits a typical on-resistance of 8.0 mΩ and a gate charge of 6300 pF. Packaged in a TO-220AB through-hole format, it supports a maximum power dissipation of 100 W at case temperature and 1.5 W at ambient temperature.
Feature Summary
- N-channel power MOSFET architecture with low gate threshold voltage
- High current handling capability suitable for robust industrial loads
- Through-hole TO-220AB package for effective thermal management
Applications
- Industrial motor control systems
- Consumer electronics power stages
- General-purpose switching circuits
Procurement Notes
Verify the specific suffix -AZ against the official Renesas datasheet to confirm pinout and electrical tolerances. Note that this component may be subject to discontinuation; consult the manufacturer's end-of-life notifications prior to finalizing procurement plans to ensure supply chain stability.
Selection Notes
Select this component when a 60 V N-channel MOSFET with high continuous current capacity is required. Ensure the application design accommodates the thermal requirements of the TO-220AB package, particularly given the significant difference between ambient and case temperature power dissipation ratings.
Part Context
This part belongs to the Renesas 2SK3354 series of N-channel power MOSFETs. It is distinct from the 2SC3554-T1-AZ, which is a bipolar junction transistor (BJT) and not a MOSFET. The 2SK3354-AZ utilizes silicon technology and is intended for single-channel power switching duties.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with direct replacements by matching the TO-220AB package, 60 V rating, and N-channel configuration.
