2SK3357-A

$3.25

Description：2SK3357 - N-CHANNEL POWER MOSFET
Series：-
Mfr：Renesas
Package：Bulk

SKU:b39d45ae39bf Category: Single FETs, MOSFETs Brand: Renesas

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：2SK3357 - N-CHANNEL POWER MOSFET
Series：-
Mfr：Renesas
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：75A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：5.8mOhm @ 38A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：170 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9800 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 150W (Tc)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P (MP-88)
Package / Case：TO-3P-3, SC-65-3

Download product information

2SK3357-A

Overview

The Renesas 2SK3357-A is an N-channel power MOSFET designed for high-current switching applications. It features a maximum drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 75 A at ambient temperature, with a thermal resistance of 3 W/°C (Ta) and 150 W/°C (Tc). The device offers a maximum on-resistance (RDS(on)) of 5.8 mΩ at VGS = 10 V and 8.8 mΩ at VGS = 4.5 V. Typical gate charge is 170 nC at 10 V. It is housed in a TO-3P (MP-88) through-hole package with a maximum operating temperature of +150 °C.

Feature Summary

Designed specifically for high-current switching applications using N-channel MOS field effect technology.
Provides low on-resistance characteristics to minimize conduction losses in power circuits.
Capable of handling significant thermal loads with defined junction-to-ambient and junction-to-case thermal resistances.

Applications

High-current DC-DC converter circuits
Motor control systems requiring robust N-channel switching
Industrial power supply designs

Procurement Notes

Verify the specific suffix 'A' against the manufacturer's latest datasheet to confirm pinout and electrical tolerances match your design requirements. Ensure the TO-3P (MP-88) package dimensions are compatible with your PCB footprint and mounting hardware. Confirm industrial qualification levels if deploying in harsh environments.

Selection Notes

Select this component when a 60 V rating and high continuous current capability are required in a through-hole package. Compare RDS(on) values at your specific gate drive voltage (4.5 V vs 10 V) to ensure adequate efficiency. Consider the thermal management capabilities provided by the TO-3P case versus other packages for your heat dissipation needs.

Part Context

The 2SK3357 series belongs to Renesas' lineup of single N-channel power MOSFETs. These devices are engineered for reliability in demanding power electronics. The TO-3P package provides mechanical stability and efficient heat transfer, distinguishing it from surface-mount alternatives while maintaining comparable electrical performance for general-purpose high-power switching.

Replacement Considerations

Check for direct substitutes within the Renesas 2SK335x family or equivalent 60 V N-channel TO-3P MOSFETs from other manufacturers. Verify that any replacement maintains the same MP-88 footprint and meets or exceeds the 75 A current and 5.8 mΩ on-resistance specifications.