2SK3377-Z-E2-AZ

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:d17844e4b1f6 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：20A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3377-Z-E2-AZ

Overview

The 2SK3377-Z-E2-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-to-source voltage of 60 V and a continuous DC drain current rating of ±20 A at 25°C. The device offers low on-state resistance, with RDS(on)1 specified as 44 mΩ maximum at VGS = 10 V and ID = 10 A, and RDS(on)2 as 78 mΩ maximum at VGS = 4.0 V and ID = 10 A. Input capacitance (Ciss) is typically 760 pF. The component includes a built-in gate protection diode and is available in TO-251 or TO-252 packages.

Feature Summary

Designed for high-current switching applications
Low on-state resistance characteristics
Built-in gate protection diode

Applications

High current switching circuits
Power management systems

Procurement Notes

Verify the obsolete status of this component before design finalization. Confirm availability through authorized distributors or check for approved replacement part numbers. Ensure compliance with RoHS3 specifications and verify that the selected package variant matches the intended PCB layout requirements.

Selection Notes

Evaluate thermal performance based on the specific case temperature conditions, as total power dissipation varies significantly between TC = 25°C and ambient temperature scenarios. Consider the single avalanche energy limits when designing for inductive load switching to ensure device reliability under transient stress conditions.

Part Context

This component belongs to the 2SK3377 series of N-channel MOSFETs from Renesas Electronics. The manufacturer acquired NEC Electronics Corporation in 2010, which originally developed these products. The datasheet indicates standard quality grade classification suitable for general industrial and commercial equipment applications.