2SK3378ENTL-E

$0.20

Description：SMALL SIGNAL N-CHANNEL MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:2760254fdf67 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：SMALL SIGNAL N-CHANNEL MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3378ENTL-E

Overview

The 2SK3378ENTL-E is a silicon N-channel MOS FET designed for high-speed switching applications. It features an enhancement mode operation with a single configuration and surface mount construction in the CMPAK package. The device supports a maximum drain current of 0.1 A and a maximum power dissipation of 0.3 W at 25°C. It operates up to a junction temperature of 150 °C. Key electrical characteristics include a typical on-resistance of 2.7 Ω at VGS = 10 V and ID = 50 mA, and 4.7 Ω at VGS = 4 V and ID = 20 mA.

Feature Summary

Low on-resistance optimized for efficient conduction at standard gate drive voltages
Designed for 4 V gate drive compatibility to simplify control circuitry
Compact CMPAK surface mount package suitable for space-constrained designs

Applications

High-speed switching circuits
General purpose signal switching
Low voltage logic interface applications

Procurement Notes

Verify the specific suffix ENTLE against official Renesas documentation to confirm tape and reel packaging details. Ensure the component meets RoHS compliance requirements as indicated in manufacturer specifications. Cross-reference the document revision REJ03G1599-0200 for accurate pinout and absolute maximum ratings before integration into final designs.

Selection Notes

Select this component when low on-resistance at 4 V or 10 V gate drive is required for small signal switching. The CMPAK package offers a compact footprint compared to traditional through-hole options. Consider the 0.1 A current limit and 0.3 W power dissipation constraints when designing thermal management solutions for the target application environment.

Part Context

The 2SK3378 belongs to the Renesas discrete semiconductor transistor family, specifically categorized as a silicon N-channel MOS FET. It is engineered for high-speed switching performance within a small form factor. The CMPAK package designation indicates a specific surface mount technology optimized for automated assembly processes in modern electronic manufacturing.