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The 2SK3385(0)-Z-E1-AZ is an N-Channel Power MOSFET designed for high current switching applications. It features a maximum drain-source voltage of 60 V and a continuous DC drain current of 30 A at 25°C case temperature. The device exhibits low on-state resistance, with RDS(on)1 specified as 28 mΩ max at VGS = 10 V and ID = 15 A, and RDS(on)2 as 45 mΩ max at VGS = 4.0 V and ID = 15 A. Input capacitance (Ciss) is typically 1500 pF. The component includes a built-in gate protection diode and is available in TO-251 or TO-252 packages.
Verify the specific package variant required, as the datasheet lists both TO-251 and TO-252 options under the base part number. Confirm that the ordering suffix matches the desired physical footprint. Ensure compliance with the Standard quality grade for general industrial use. Check for any updates to the electrical characteristics before finalizing the design.
Select this component when a 60 V N-Channel MOSFET with high current capacity is needed. Consider the thermal dissipation requirements, as total power dissipation drops significantly from case to ambient temperature. Evaluate the gate drive voltage levels against the specified RDS(on) thresholds to ensure optimal performance and efficiency in the target application.
This device belongs to the Renesas Electronics discrete semiconductor portfolio, specifically within the MOS Field Effect Transistor category. Originally developed by NEC Electronics Corporation prior to its merger with Renesas Technology Corporation, it remains a valid product in the current lineup. It serves as a robust solution for general-purpose power switching tasks.
Consult official documentation for direct substitutes. Verify pinout compatibility and electrical ratings match exactly. No public substitute part numbers are confirmed in the provided source material.