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The 2SK3386(0)-Z-E1-AZ is an N-Channel Power MOSFET designed for high current switching applications. It features a low on-state resistance of 21 mΩ maximum at VGS = 10 V and ID = 17 A, and 36 mΩ maximum at VGS = 4.0 V and ID = 17 A. The device has a drain-to-source voltage rating of 60 V and a continuous drain current capability of 34 A. It includes a built-in gate protection diode and is available in TO-251 or TO-252 packages.
Verify the specific package variant (TO-251 or TO-252) required for your design, as the base part number covers both. Confirm the latest datasheet revision with Renesas Electronics before finalizing the design, as specifications are subject to change. Ensure compliance with the product's quality grade for the intended application environment.
Select this component for applications requiring robust N-channel MOSFET performance with integrated gate protection. Consider the thermal characteristics and safe operating area when designing for high current loads. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-state resistance.
This component belongs to the Renesas (formerly NEC Electronics) discrete semiconductor portfolio. It is an N-Channel Power MOSFET optimized for switching applications. The manufacturer merged in 2010, but the documentation retains historical naming conventions. It is distinct from other series within the Renesas lineup based on its specific voltage and current ratings.
Publicly confirmed substitute part numbers are not provided in the source material. Consult Renesas Electronics sales offices for potential alternatives or cross-reference options.