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Product Detailed Parameters
- Description：MOSFET N-CH 250V 20A 4TFP
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：105mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：100 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4000 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-TFP (9.2x9.2)
- Package / Case：SC-97
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Overview
The Toshiba 2SK3388 is a silicon N-channel MOS type (π-MOSV) field effect transistor designed for switching regulator, DC-DC converter, and motor drive applications. It features a low drain-source ON resistance of 82 mΩ typical at VGS = 10 V and ID = 10 A, alongside a high forward transfer admittance of 20 S typical. The device supports a maximum drain-source voltage of 250 V and a continuous DC drain current of 20 A. Thermal characteristics include a channel-to-case thermal resistance of 1.0 °C/W and a maximum channel temperature of 150 °C.
Feature Summary
- Utilizes π-MOSV structure to achieve low on-resistance and high forward transfer admittance
- Supports single pulse avalanche energy up to 487 mJ with repetitive rating of 12.5 mJ
- Features an enhancement mode gate threshold voltage ranging from 1.5 V to 3.5 V
- Designed with specific pinout configuration requiring main current flow into the S2 pin
Applications
- Switching regulators
- DC-DC converters
- Motor drives
Procurement Notes
Verify RoHS compatibility status directly with Toshiba Semiconductor sales representatives as indicated in the datasheet. Confirm that the ordering suffix TE24L,Q corresponds to the specified SC-97 package and terminal configuration. Ensure design accounts for electrostatic sensitivity precautions during handling and assembly processes.
Selection Notes
Select this component when designing circuits requiring a 250 V rated N-channel MOSFET with high current handling capabilities up to 20 A. Consider the thermal resistance of 1.0 °C/W for heat dissipation planning. Verify that the gate threshold voltage range aligns with the control logic levels available in the target switching application.
Part Context
This part belongs to the Toshiba Field Effect Transistor series utilizing Silicon N Channel MOS technology. It is categorized under power discrete semiconductors intended for general electronics applications such as industrial equipment and measuring instruments, excluding unintended uses like aerospace or medical systems without specific permission.
Replacement Considerations
Datasheet lists similar parts including 2SK2613, 2SK3236, 2SK3342, 2SK3373, 2SK3389, 2SK3398, and 2SK3842. These alternatives share similar switching regulator and motor drive application profiles but may differ in specific electrical ratings.
