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Product Detailed Parameters
- Description：2SK3402-AZ - SWITCHING N-CHANNEL
- Series：-
- Mfr：Renesas
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3200 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 40W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (MP-3Z)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The 2SK3402-AZ is an N-channel Power MOSFET designed for automotive applications. It features a maximum drain-source breakdown voltage of 60 V and a continuous drain current of 36 A. The device exhibits a typical gate charge of 61 nC and a maximum on-resistance of 15 mΩ at 10 V gate drive. It operates with a maximum junction temperature of 150 °C and utilizes a TO-252 (MP-3Z) package.
Feature Summary
- Designed specifically for automotive power switching environments
- N-channel MOSFET technology with built-in body diode characteristics
- Low on-resistance for efficient power management
Applications
- Automotive power distribution systems
- High-current switching circuits in vehicle electronics
- Load switching applications requiring robust thermal performance
Procurement Notes
Verify the specific suffix codes to ensure compatibility with required packaging and lead-free standards. Confirm that the component meets the intended automotive qualification levels before integration into final assemblies. Cross-reference datasheet revisions to ensure parameter consistency with existing design specifications.
Selection Notes
Select this component when automotive-grade reliability and high current handling are required. The low on-resistance supports efficient thermal management in compact designs. Ensure the driving circuit can provide sufficient gate voltage to achieve the specified low resistance values during operation.
Part Context
This part belongs to Renesas' automotive-focused Power MOSFET portfolio. It replaces older NEC Electronics designs following corporate mergers. The component serves as a critical switching element in modern vehicle electrical architectures, offering improved efficiency over previous generations.
Replacement Considerations
Check for direct substitutes within the same automotive series. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers. Ensure any replacement maintains the required 60 V rating and 36 A current capacity.
