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The 2SK3402(0)-Z-E1-AZ is an N-Channel Power MOSFET designed for high current switching applications. It features a low on-state resistance of 15 mΩ maximum at VGS = 10 V and ID = 18 A, or 22 mΩ maximum at VGS = 4.0 V and ID = 18 A. The device supports a drain current of up to 36 A DC and includes a built-in gate protection diode. Available in TO-251 and TO-252 packages, it offers robust avalanche capability with an energy rating of 123 mJ.
Verify the specific package variant (TO-251 or TO-252) required for your design, as the base part number covers both. Confirm RoHS compliance status directly with Renesas Electronics sales offices, as environmental certifications can vary by production batch and region. Ensure the quality grade meets your application's reliability standards before finalizing procurement.
Select this component when designing circuits requiring high continuous drain current and low conduction losses. Consider the thermal resistance characteristics and safe operating area limits for your specific duty cycle. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance.
This component belongs to the Renesas (formerly NEC Electronics) discrete semiconductor portfolio. It is classified as a standard quality grade MOSFET suitable for general industrial and consumer electronics. The product line emphasizes reliability and performance in power switching environments.
Check for direct equivalents within the 2SK3402 series. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) before substituting.